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The Metal Oxide Semiconducter (MOS) Transistor

This decision would eventually lead to both the rise and fall of IBM. Throughout the 60's and 70's IBM would dominate the market with their faster bipolar transistors serving as the base for their digital products. It wasn't until the 80's in which Intel finally garnered enough ground in the market to become a compelling opponent to IBM. Feeling the pressure from Intel, IBM switched to manufacturing both MOS and bipolar transistors, however, it was too late. Intel's already prevalent and existent advancements in MOS transistor technology would lead to IBM's failure and inability to compete in the market it had practically monopolized just a decade earlier. This led to the IBM ordeal of the early 90's in which thousands of IBM employees were laid off as a result of IBM closing its bipolar transistor facility. A day that marked the beginning of a new age in semiconductor manufacturing, the asserted dominance of Intel over IBM and as a result the dominance of the MOS transistor over the bipolar transistors. This day however is also marked in infamy in local history because it was especially crushing to both the locals of Westchester and more specifically the citizens of Armonk. Had IBM remained prevalent we might have seen a silicon valley of some sorts nestled right here in our backyard in Westchester. .
             The structure of an MOS transistor is due to the basic property of Silicon's valence shell. With only 4 valence electrons silicon creates tetrahedral crystals. These structures are relatively stable considering that a large amount of energy is required to move an electron from silicon's covalent bonds. A method known as doping is used to increase the amount of mobile electrons within a transistor. N-type or negative-type doping is when an atom with 5 valence electrons is injected in place of one with 4. Most commonly phosphorus is injected in place of silicon in N-type doping. The other type of doping is P-type or positive type doping.


Essays Related to The Metal Oxide Semiconducter (MOS) Transistor

1. Transistors

So he placed a metal cylinder around the filament in the bulb and connected the cylindrical plate to a terminal, the current could only flow from the negative filament to the cold positive plate. ... From these energy levels they found that metals have very low electrical resistance because the conduction and valence bands overlap meaning there is more electrons available for conduction. ... These methods were devised and because silicon is more abundant, retains its semiconducting properties at a higher temperature and forms an insulating oxide layer when heated to high temperatures in oxygen...

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2. What is a Transistor

What is a transistor? ... There are two kinds, the bipolar transistor (also called the junction transistor), and the field effect transistor (FET). ... How a FET transistor works? The field-effect transistor (FET) controls the current between two points but does so differently than the bipolar transistor. ... The insulator is typically made of an oxide (such as silicon dioxide, SiO2), This type of device is called a metal-oxide-semiconductor FET (MOSFET) or insulated-gate FET (IGFET). ...

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3. Gallium Arsenide

The major challenge in making gallium arsenide MOSFETs is perfecting the thin gate oxide material that's directly below the transistor's gate electrode, which receives electrical signal and acts as the transistor's switch by turning it on and off. Beneath the gate oxide is the channel that's made from gallium arsenide. ... For this reason, the channel is known as the transistor's active region, and it must have a smooth, defect-free interface with the gate oxide layer to operate properly. ... In the latest research, the researchers have improved the stability and elect...

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4. Semiconductors

In general, metals are inherently good electrical conductors, while Ceramics and polymers (non-metals) are generally poor conductors but good insulators. ... They diffuse various layers onto the surface of a silicon wafer to make a transistor, leaving a layer of protective oxide on the junctions. This method allowed metal interconnections to be evaporated onto the flat transistor surface and replaced the hand wiring. ... We get this by mixing refined Trichlorosilane with hydrogen gas in a reaction furnace and we allow the polycrystalline silicon to grow on the surface of electrically heated ta...

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5. Nanofiber

Field-effect transistors, sensors, detectors and light-emitting diodes etc. and many new are coming up. ... In this process a small size (5 -100 nm in diameter), high melting point metal (such as Gold and Iron) catalyst particle directs the nanowires growth-direction. ... In the thermal evaporation stage, after oxidation-reduction or disproportionation of SiO to Si + SiO2, condensation of SiO vapor give rise to the oxide assisted growth of silicon nanowires. ...

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6. Nanofiber

Field-effect transistors, sensors, detectors and light-emitting diodes etc. and many new are coming up. ... In this process a small size (5 -100 nm in diameter), high melting point metal (such as Gold and Iron) catalyst particle directs the nanowires growth-direction. ... In the thermal evaporation stage, after oxidation-reduction or disproportionation of SiO to Si + SiO2, condensation of SiO vapor give rise to the oxide assisted growth of silicon nanowires. ...

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7. Iron Oxide Nanoparticles

Iron [26Fe], a metal in the first transition series, is one of the most ubiquitous and abundant elements existing in the inner and outer core of the Earth. Iron has sixteen oxides and hydroxides; two stable oxidation states in an aqueous solution of ferrous, Fe(II), and the ferric, Fe(III)[1]. Iron oxides are widespread in nature; they are also conveniently synthesized in the laboratory. ... The impacts of metal oxides on the properties of cement, including Fe2O3, do not make an impression on the setting and unconfined compressive strength at short sample ages; it decreases the unconfined c...

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8. IC Fabrication

This is known as 'wet oxidation'. ... Contact Etch This is an oxide cleaning process. ... Drive- In Oxidation Repeat the process of oxidation as in first step. ... The probe station is used to test field effect transistors and diode. ... In the university, an average die of 20 mm2 can pack an average of less than 100 transistors. ...

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